Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs

Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs

10.1109/VLSIT.2007.4339719

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Bibliographic Details
Main Authors:	Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83511
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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