Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs

• Main Authors: Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83511
• Institution: National University of Singapore

10.1109/VLSIT.2007.4339719