Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement

Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement

10.1109/IEDM.2006.346815

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Bibliographic Details
Main Authors: Liow, T.-Y., Tan, K.-M., Chin, H.-C., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83529
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Institution: National University of Singapore
Description
Summary:10.1109/IEDM.2006.346815

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