Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement

10.1109/IEDM.2006.346815

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Bibliographic Details
Main Authors:	Liow, T.-Y., Tan, K.-M., Chin, H.-C., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83529
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83529
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spelling	sg-nus-scholar.10635-835292015-01-17T16:42:25Z Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement Liow, T.-Y. Tan, K.-M. Chin, H.-C. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2006.346815 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-10-07T04:42:15Z 2014-10-07T04:42:15Z 2006 Conference Paper Liow, T.-Y.,Tan, K.-M.,Chin, H.-C.,Lee, R.T.P.,Tung, C.-H.,Samudra, G.S.,Balasubramanian, N.,Yeo, Y.-C. (2006). Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2006.346815" target="_blank">https://doi.org/10.1109/IEDM.2006.346815</a> 1424404398 01631918 http://scholarbank.nus.edu.sg/handle/10635/83529 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2006.346815
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liow, T.-Y. Tan, K.-M. Chin, H.-C. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liow, T.-Y. Tan, K.-M. Chin, H.-C. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
spellingShingle	Liow, T.-Y. Tan, K.-M. Chin, H.-C. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
author_sort	Liow, T.-Y.
title	Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
title_short	Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
title_full	Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
title_fullStr	Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
title_full_unstemmed	Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
title_sort	carrier transport characteristics of sub-30 nm strained n-channel finfets featuring silicon-carbon source/drain regions and methods for further performance enhancement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83529
_version_	1681089452699549696

Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement

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