Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric

Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric

10.1109/IEDM.2006.346776

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Bibliographic Details
Main Authors: Shen, C., Li, M.-F., Foo, C.E., Yang, T., Huang, D.M., Yaps, A., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83537
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Institution: National University of Singapore
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Summary:10.1109/IEDM.2006.346776

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