Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric

10.1109/IEDM.2006.346776

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Main Authors: Shen, C., Li, M.-F., Foo, C.E., Yang, T., Huang, D.M., Yaps, A., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83537
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-835372015-01-08T17:31:14Z Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric Shen, C. Li, M.-F. Foo, C.E. Yang, T. Huang, D.M. Yaps, A. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2006.346776 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-10-07T04:42:20Z 2014-10-07T04:42:20Z 2006 Conference Paper Shen, C.,Li, M.-F.,Foo, C.E.,Yang, T.,Huang, D.M.,Yaps, A.,Samudra, G.S.,Yeo, Y.-C. (2006). Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2006.346776" target="_blank">https://doi.org/10.1109/IEDM.2006.346776</a> 1424404398 01631918 http://scholarbank.nus.edu.sg/handle/10635/83537 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1109/IEDM.2006.346776
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Shen, C.
Li, M.-F.
Foo, C.E.
Yang, T.
Huang, D.M.
Yaps, A.
Samudra, G.S.
Yeo, Y.-C.
format Conference or Workshop Item
author Shen, C.
Li, M.-F.
Foo, C.E.
Yang, T.
Huang, D.M.
Yaps, A.
Samudra, G.S.
Yeo, Y.-C.
spellingShingle Shen, C.
Li, M.-F.
Foo, C.E.
Yang, T.
Huang, D.M.
Yaps, A.
Samudra, G.S.
Yeo, Y.-C.
Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric
author_sort Shen, C.
title Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric
title_short Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric
title_full Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric
title_fullStr Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric
title_full_unstemmed Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric
title_sort characterization and physical origin of fast vth transient in nbti of pmosfets with sion dielectric
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83537
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