Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric

• Main Authors: Shen, C., Li, M.-F., Foo, C.E., Yang, T., Huang, D.M., Yaps, A., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83537
• Institution: National University of Singapore

10.1109/IEDM.2006.346776