Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric

10.1109/IEDM.2006.346776

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Bibliographic Details
Main Authors: Shen, C., Li, M.-F., Foo, C.E., Yang, T., Huang, D.M., Yaps, A., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83537
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Institution: National University of Singapore

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