Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric

• Main Authors: Shen, C., Li, M.-F., Foo, C.E., Yang, T., Huang, D.M., Yaps, A., Samudra, G.S., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83537

10.1109/IEDM.2006.346776