Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition

Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition

10.1016/j.jcrysgro.2004.04.082

Saved in:
Bibliographic Details
Main Authors: Liu, W., Soh, C.B., Chen, P., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
A1. Atomic force microscopy
A1. Composition pulling effect
A1. Photoluminescence
A1. V-pits
A1. X-ray diffraction
A3. Metalorganic chemical vapor deposition
B1. AlInGaN quaternary
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83539
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1016/j.jcrysgro.2004.04.082

Similar Items