Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition

10.1016/j.jcrysgro.2004.04.082

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Bibliographic Details
Main Authors:	Liu, W., Soh, C.B., Chen, P., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	A1. Atomic force microscopy A1. Composition pulling effect A1. Photoluminescence A1. V-pits A1. X-ray diffraction A3. Metalorganic chemical vapor deposition B1. AlInGaN quaternary
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83539
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83539
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spelling	sg-nus-scholar.10635-835392023-10-27T08:01:50Z Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition Liu, W. Soh, C.B. Chen, P. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING A1. Atomic force microscopy A1. Composition pulling effect A1. Photoluminescence A1. V-pits A1. X-ray diffraction A3. Metalorganic chemical vapor deposition B1. AlInGaN quaternary 10.1016/j.jcrysgro.2004.04.082 Journal of Crystal Growth 268 3-4 SPEC. ISS. 509-514 JCRGA 2014-10-07T04:42:21Z 2014-10-07T04:42:21Z 2004-08-01 Conference Paper Liu, W., Soh, C.B., Chen, P., Chua, S.J. (2004-08-01). Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 509-514. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.082 00220248 http://scholarbank.nus.edu.sg/handle/10635/83539 000223087000033 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	A1. Atomic force microscopy A1. Composition pulling effect A1. Photoluminescence A1. V-pits A1. X-ray diffraction A3. Metalorganic chemical vapor deposition B1. AlInGaN quaternary
spellingShingle	A1. Atomic force microscopy A1. Composition pulling effect A1. Photoluminescence A1. V-pits A1. X-ray diffraction A3. Metalorganic chemical vapor deposition B1. AlInGaN quaternary Liu, W. Soh, C.B. Chen, P. Chua, S.J. Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
description	10.1016/j.jcrysgro.2004.04.082
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, W. Soh, C.B. Chen, P. Chua, S.J.
format	Conference or Workshop Item
author	Liu, W. Soh, C.B. Chen, P. Chua, S.J.
author_sort	Liu, W.
title	Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
title_short	Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
title_full	Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
title_fullStr	Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
title_full_unstemmed	Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
title_sort	characterization of alingan quaternary epilayers grown by metal organic chemical vapor deposition
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83539
_version_	1781784365458522112

Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition

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