Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

10.1109/ISDRS.2011.6135218

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Bibliographic Details
Main Authors:	Ivana, Subramanian, S., Kong, E.Y.-J., Zhou, Q., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83556
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83556
record_format	dspace
spelling	sg-nus-scholar.10635-835562024-11-10T04:42:38Z Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs Ivana Subramanian, S. Kong, E.Y.-J. Zhou, Q. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ISDRS.2011.6135218 2011 International Semiconductor Device Research Symposium, ISDRS 2011 - 2014-10-07T04:42:33Z 2014-10-07T04:42:33Z 2011 Conference Paper Ivana,Subramanian, S.,Kong, E.Y.-J.,Zhou, Q.,Yeo, Y.-C. (2011). Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2011.6135218" target="_blank">https://doi.org/10.1109/ISDRS.2011.6135218</a> 9781457717550 http://scholarbank.nus.edu.sg/handle/10635/83556 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/ISDRS.2011.6135218
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ivana Subramanian, S. Kong, E.Y.-J. Zhou, Q. Yeo, Y.-C.
format	Conference or Workshop Item
author	Ivana Subramanian, S. Kong, E.Y.-J. Zhou, Q. Yeo, Y.-C.
spellingShingle	Ivana Subramanian, S. Kong, E.Y.-J. Zhou, Q. Yeo, Y.-C. Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
author_sort	Ivana
title	Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_short	Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_full	Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_fullStr	Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_full_unstemmed	Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_sort	co-ingaas as a novel self-aligned metallic source/drain material for implant-less in 0.53ga 0.47as n-mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83556
_version_	1821210818913501184

Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

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