Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

• Main Authors: Ivana, Subramanian, S., Kong, E.Y.-J., Zhou, Q., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83556
• Institution: National University of Singapore

10.1109/ISDRS.2011.6135218