Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime

10.1143/JJAP.43.7807

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Bibliographic Details
Main Authors:	Li, M.F., Chen, G., Shen, C., Wang, X.P., Yu, H.Y., Yeo, Y.-C., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	CMOS FET Reliability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83656
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83656
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spelling	sg-nus-scholar.10635-836562024-11-12T21:58:56Z Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime Li, M.F. Chen, G. Shen, C. Wang, X.P. Yu, H.Y. Yeo, Y.-C. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING CMOS FET Reliability 10.1143/JJAP.43.7807 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 11 B 7807-7814 JAPND 2014-10-07T04:43:41Z 2014-10-07T04:43:41Z 2004-11 Conference Paper Li, M.F., Chen, G., Shen, C., Wang, X.P., Yu, H.Y., Yeo, Y.-C., Kwong, D.L. (2004-11). Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (11 B) : 7807-7814. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.7807 00214922 http://scholarbank.nus.edu.sg/handle/10635/83656 000226034900002 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	CMOS FET Reliability
spellingShingle	CMOS FET Reliability Li, M.F. Chen, G. Shen, C. Wang, X.P. Yu, H.Y. Yeo, Y.-C. Kwong, D.L. Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime
description	10.1143/JJAP.43.7807
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Li, M.F. Chen, G. Shen, C. Wang, X.P. Yu, H.Y. Yeo, Y.-C. Kwong, D.L.
format	Conference or Workshop Item
author	Li, M.F. Chen, G. Shen, C. Wang, X.P. Yu, H.Y. Yeo, Y.-C. Kwong, D.L.
author_sort	Li, M.F.
title	Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime
title_short	Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime
title_full	Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime
title_fullStr	Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime
title_full_unstemmed	Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime
title_sort	dynamic bias-temperature instability in ultrathin sio 2 and hfo 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83656
_version_	1821194536314994688

Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime

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