Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime

Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime

10.1143/JJAP.43.7807

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Bibliographic Details
Main Authors: Li, M.F., Chen, G., Shen, C., Wang, X.P., Yu, H.Y., Yeo, Y.-C., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
CMOS
FET
Reliability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83656
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Institution: National University of Singapore

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