Effects of O2 and Ar reactive ion etching on the field emission properties of aligned CuO nanowire films

Effects of O2 and Ar reactive ion etching on the field emission properties of aligned CuO nanowire films

Diffusion and Defect Data Pt.B: Solid State Phenomena

Saved in:
Bibliographic Details
Main Authors: Zhu, Y.W., Teo, C.H., Xu, X.J., Yu, T., Lim, C.T., Ong, C.K., Thong, J.T.L., Sow, C.H.
Other Authors: NUS NANOSCIENCE & NANOTECH INITIATIVE
Format: Conference or Workshop Item
Published: 2014
Subjects:
CuO
Field emission
Nanowires
Reactive ion etching (RIE)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83682
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83682

Similar Items