Effects of O2 and Ar reactive ion etching on the field emission properties of aligned CuO nanowire films

Effects of O2 and Ar reactive ion etching on the field emission properties of aligned CuO nanowire films

Diffusion and Defect Data Pt.B: Solid State Phenomena

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Bibliographic Details
Main Authors: Zhu, Y.W., Teo, C.H., Xu, X.J., Yu, T., Lim, C.T., Ong, C.K., Thong, J.T.L., Sow, C.H.
Other Authors: NUS NANOSCIENCE & NANOTECH INITIATIVE
Format: Conference or Workshop Item
Published: 2014
Subjects:
CuO
Field emission
Nanowires
Reactive ion etching (RIE)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83682
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Institution: National University of Singapore
Description
Summary:Diffusion and Defect Data Pt.B: Solid State Phenomena

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