Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)

10.1109/VLSI-TSA.2012.6210150

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Main Authors:	Subramanian, S., Ivana, Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83692
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-836922015-01-09T13:14:44Z Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) Subramanian, S. Ivana Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSI-TSA.2012.6210150 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - 2014-10-07T04:44:06Z 2014-10-07T04:44:06Z 2012 Conference Paper Subramanian, S.,Ivana,Yeo, Y.-C. (2012). Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET). International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210150" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210150</a> 9781457720840 19308868 http://scholarbank.nus.edu.sg/handle/10635/83692 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSI-TSA.2012.6210150
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Subramanian, S. Ivana Yeo, Y.-C.
format	Conference or Workshop Item
author	Subramanian, S. Ivana Yeo, Y.-C.
spellingShingle	Subramanian, S. Ivana Yeo, Y.-C. Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
author_sort	Subramanian, S.
title	Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
title_short	Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
title_full	Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
title_fullStr	Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
title_full_unstemmed	Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
title_sort	embedded metal source/drain (emsd) for series resistance reduction in in 0.53ga 0.47as n-channel ultra-thin body field-effect transistor (utb-fet)
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83692
_version_	1681089482674143232

Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)

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