Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

10.1109/IEDM.2012.6479143

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Bibliographic Details
Main Authors: Wang, W.J., Loke, D., Law, L.T., Shi, L.P., Zhao, R., Li, M.H., Chen, L.L., Yang, H.X., Yeo, Y.C., Adeyeye, A.O., Chong, T.C., Lacaita, A.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83696
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Institution: National University of Singapore
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Summary:10.1109/IEDM.2012.6479143

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