Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

• Main Authors: Wang, W.J., Loke, D., Law, L.T., Shi, L.P., Zhao, R., Li, M.H., Chen, L.L., Yang, H.X., Yeo, Y.C., Adeyeye, A.O., Chong, T.C., Lacaita, A.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83696
• Institution: National University of Singapore

10.1109/IEDM.2012.6479143