Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

10.1109/IEDM.2012.6479143

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Main Authors: Wang, W.J., Loke, D., Law, L.T., Shi, L.P., Zhao, R., Li, M.H., Chen, L.L., Yang, H.X., Yeo, Y.C., Adeyeye, A.O., Chong, T.C., Lacaita, A.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83696
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-836962015-01-08T16:31:00Z Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities Wang, W.J. Loke, D. Law, L.T. Shi, L.P. Zhao, R. Li, M.H. Chen, L.L. Yang, H.X. Yeo, Y.C. Adeyeye, A.O. Chong, T.C. Lacaita, A.L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2012.6479143 Technical Digest - International Electron Devices Meeting, IEDM 31.3.1-31.3.4 TDIMD 2014-10-07T04:44:09Z 2014-10-07T04:44:09Z 2012 Conference Paper Wang, W.J.,Loke, D.,Law, L.T.,Shi, L.P.,Zhao, R.,Li, M.H.,Chen, L.L.,Yang, H.X.,Yeo, Y.C.,Adeyeye, A.O.,Chong, T.C.,Lacaita, A.L. (2012). Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities. Technical Digest - International Electron Devices Meeting, IEDM : 31.3.1-31.3.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2012.6479143" target="_blank">https://doi.org/10.1109/IEDM.2012.6479143</a> 9781467348706 01631918 http://scholarbank.nus.edu.sg/handle/10635/83696 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1109/IEDM.2012.6479143
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wang, W.J.
Loke, D.
Law, L.T.
Shi, L.P.
Zhao, R.
Li, M.H.
Chen, L.L.
Yang, H.X.
Yeo, Y.C.
Adeyeye, A.O.
Chong, T.C.
Lacaita, A.L.
format Conference or Workshop Item
author Wang, W.J.
Loke, D.
Law, L.T.
Shi, L.P.
Zhao, R.
Li, M.H.
Chen, L.L.
Yang, H.X.
Yeo, Y.C.
Adeyeye, A.O.
Chong, T.C.
Lacaita, A.L.
spellingShingle Wang, W.J.
Loke, D.
Law, L.T.
Shi, L.P.
Zhao, R.
Li, M.H.
Chen, L.L.
Yang, H.X.
Yeo, Y.C.
Adeyeye, A.O.
Chong, T.C.
Lacaita, A.L.
Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
author_sort Wang, W.J.
title Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
title_short Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
title_full Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
title_fullStr Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
title_full_unstemmed Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
title_sort engineering grains of ge2sb2te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83696
_version_ 1681089483413389312

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