Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties

Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties

10.1109/PVSC.2013.6744487

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Bibliographic Details
Main Authors: Duttagupta, S., Ma, F.-J., Hoex, B., Aberle, A.G.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Conference or Workshop Item
Published: 2014
Subjects:
Boron emitter
Industrial firing
PECVD
Silicon oxide/silicon nitride stacks
Surface passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83719
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Institution: National University of Singapore
Description
Summary:10.1109/PVSC.2013.6744487

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