Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties

• Main Authors: Duttagupta, S., Ma, F.-J., Hoex, B., Aberle, A.G.
• Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Boron emitter; Industrial firing; PECVD; Silicon oxide/silicon nitride stacks; Surface passivation
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83719
• Institution: National University of Singapore

10.1109/PVSC.2013.6744487