Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties

10.1109/PVSC.2013.6744487

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Bibliographic Details
Main Authors:	Duttagupta, S., Ma, F.-J., Hoex, B., Aberle, A.G.
Other Authors:	SOLAR ENERGY RESEARCH INST OF S'PORE
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Boron emitter Industrial firing PECVD Silicon oxide/silicon nitride stacks Surface passivation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83719
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83719
record_format	dspace
spelling	sg-nus-scholar.10635-837192015-01-12T15:04:33Z Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties Duttagupta, S. Ma, F.-J. Hoex, B. Aberle, A.G. SOLAR ENERGY RESEARCH INST OF S'PORE ELECTRICAL & COMPUTER ENGINEERING Boron emitter Industrial firing PECVD Silicon oxide/silicon nitride stacks Surface passivation 10.1109/PVSC.2013.6744487 Conference Record of the IEEE Photovoltaic Specialists Conference 1776-1780 CRCND 2014-10-07T04:44:24Z 2014-10-07T04:44:24Z 2013 Conference Paper Duttagupta, S.,Ma, F.-J.,Hoex, B.,Aberle, A.G. (2013). Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties. Conference Record of the IEEE Photovoltaic Specialists Conference : 1776-1780. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/PVSC.2013.6744487" target="_blank">https://doi.org/10.1109/PVSC.2013.6744487</a> 9781479932993 01608371 http://scholarbank.nus.edu.sg/handle/10635/83719 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Boron emitter Industrial firing PECVD Silicon oxide/silicon nitride stacks Surface passivation
spellingShingle	Boron emitter Industrial firing PECVD Silicon oxide/silicon nitride stacks Surface passivation Duttagupta, S. Ma, F.-J. Hoex, B. Aberle, A.G. Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
description	10.1109/PVSC.2013.6744487
author2	SOLAR ENERGY RESEARCH INST OF S'PORE
author_facet	SOLAR ENERGY RESEARCH INST OF S'PORE Duttagupta, S. Ma, F.-J. Hoex, B. Aberle, A.G.
format	Conference or Workshop Item
author	Duttagupta, S. Ma, F.-J. Hoex, B. Aberle, A.G.
author_sort	Duttagupta, S.
title	Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
title_short	Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
title_full	Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
title_fullStr	Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
title_full_unstemmed	Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
title_sort	extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged pecvd siox/sinx dielectric stacks with optimised antireflective properties
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83719
_version_	1681089487660122112

Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties

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