High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

10.1109/IEDM.2013.6724700

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Bibliographic Details
Main Authors: Liu, B., Gong, X., Cheng, R., Guo, P., Zhou, Q., Owen, M.H.S., Guo, C., Wang, L., Wang, W., Yang, Y., Yeo, Y.-C., Wan, C.-T., Chen, S.-H., Cheng, C.-C., Lin, Y.-R., Wu, C.-H., Ko, C.-H., Wann, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83783
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Institution: National University of Singapore
Description
Summary:10.1109/IEDM.2013.6724700

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