High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

• Main Authors: Liu, B., Gong, X., Cheng, R., Guo, P., Zhou, Q., Owen, M.H.S., Guo, C., Wang, L., Wang, W., Yang, Y., Yeo, Y.-C., Wan, C.-T., Chen, S.-H., Cheng, C.-C., Lin, Y.-R., Wu, C.-H., Ko, C.-H., Wann, C.H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83783
• Institution: National University of Singapore

10.1109/IEDM.2013.6724700