High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

10.1109/IEDM.2013.6724700

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Bibliographic Details
Main Authors:	Liu, B., Gong, X., Cheng, R., Guo, P., Zhou, Q., Owen, M.H.S., Guo, C., Wang, L., Wang, W., Yang, Y., Yeo, Y.-C., Wan, C.-T., Chen, S.-H., Cheng, C.-C., Lin, Y.-R., Wu, C.-H., Ko, C.-H., Wann, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83783
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83783
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spelling	sg-nus-scholar.10635-837832015-01-09T22:35:51Z High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications Liu, B. Gong, X. Cheng, R. Guo, P. Zhou, Q. Owen, M.H.S. Guo, C. Wang, L. Wang, W. Yang, Y. Yeo, Y.-C. Wan, C.-T. Chen, S.-H. Cheng, C.-C. Lin, Y.-R. Wu, C.-H. Ko, C.-H. Wann, C.H. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2013.6724700 Technical Digest - International Electron Devices Meeting, IEDM 26.7.1-26.7.3 TDIMD 2014-10-07T04:45:08Z 2014-10-07T04:45:08Z 2013 Conference Paper Liu, B.,Gong, X.,Cheng, R.,Guo, P.,Zhou, Q.,Owen, M.H.S.,Guo, C.,Wang, L.,Wang, W.,Yang, Y.,Yeo, Y.-C.,Wan, C.-T.,Chen, S.-H.,Cheng, C.-C.,Lin, Y.-R.,Wu, C.-H.,Ko, C.-H.,Wann, C.H. (2013). High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications. Technical Digest - International Electron Devices Meeting, IEDM : 26.7.1-26.7.3. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2013.6724700" target="_blank">https://doi.org/10.1109/IEDM.2013.6724700</a> 9781479923076 01631918 http://scholarbank.nus.edu.sg/handle/10635/83783 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2013.6724700
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, B. Gong, X. Cheng, R. Guo, P. Zhou, Q. Owen, M.H.S. Guo, C. Wang, L. Wang, W. Yang, Y. Yeo, Y.-C. Wan, C.-T. Chen, S.-H. Cheng, C.-C. Lin, Y.-R. Wu, C.-H. Ko, C.-H. Wann, C.H.
format	Conference or Workshop Item
author	Liu, B. Gong, X. Cheng, R. Guo, P. Zhou, Q. Owen, M.H.S. Guo, C. Wang, L. Wang, W. Yang, Y. Yeo, Y.-C. Wan, C.-T. Chen, S.-H. Cheng, C.-C. Lin, Y.-R. Wu, C.-H. Ko, C.-H. Wann, C.H.
spellingShingle	Liu, B. Gong, X. Cheng, R. Guo, P. Zhou, Q. Owen, M.H.S. Guo, C. Wang, L. Wang, W. Yang, Y. Yeo, Y.-C. Wan, C.-T. Chen, S.-H. Cheng, C.-C. Lin, Y.-R. Wu, C.-H. Ko, C.-H. Wann, C.H. High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications
author_sort	Liu, B.
title	High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications
title_short	High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications
title_full	High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications
title_fullStr	High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications
title_full_unstemmed	High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications
title_sort	high performance ge cmos with novel inalp-passivated channels for future sub-10 nm technology node applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83783
_version_	1681089499445067776

High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

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