High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain

10.1109/SNW.2012.6243323

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Bibliographic Details
Main Authors:	Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Pulido, M., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83789
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83789
record_format	dspace
spelling	sg-nus-scholar.10635-837892015-01-08T17:53:48Z High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain Liu, B. Gong, X. Han, G. Lim, P.S.Y. Tong, Y. Zhou, Q. Yang, Y. Daval, N. Pulido, M. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/SNW.2012.6243323 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 - 2014-10-07T04:45:12Z 2014-10-07T04:45:12Z 2012 Conference Paper Liu, B.,Gong, X.,Han, G.,Lim, P.S.Y.,Tong, Y.,Zhou, Q.,Yang, Y.,Daval, N.,Pulido, M.,Delprat, D.,Nguyen, B.-Y.,Yeo, Y.-C. (2012). High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain. 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/SNW.2012.6243323" target="_blank">https://doi.org/10.1109/SNW.2012.6243323</a> 9781467309943 http://scholarbank.nus.edu.sg/handle/10635/83789 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/SNW.2012.6243323
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, B. Gong, X. Han, G. Lim, P.S.Y. Tong, Y. Zhou, Q. Yang, Y. Daval, N. Pulido, M. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liu, B. Gong, X. Han, G. Lim, P.S.Y. Tong, Y. Zhou, Q. Yang, Y. Daval, N. Pulido, M. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
spellingShingle	Liu, B. Gong, X. Han, G. Lim, P.S.Y. Tong, Y. Zhou, Q. Yang, Y. Daval, N. Pulido, M. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain
author_sort	Liu, B.
title	High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain
title_short	High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain
title_full	High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain
title_fullStr	High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain
title_full_unstemmed	High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain
title_sort	high performance ω-gate ge finfet featuring low temperature si 2h 6 passivation and implantless schottky-barrier nige metallic source/drain
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83789
_version_	1681089500543975424

High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain

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