Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors

Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors

10.1109/SISPAD.2006.282857

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Bibliographic Details
Main Authors: Agrawal, N., Chen, J., Hui, Z., Yeo, Y.-C., Lee, S., Chan, D.S.H., Li, M.-F., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Dual slope
Metal gate
Metal source/drain
Schottky source-drain
TBGD
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83854
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-838542015-02-02T04:07:12Z Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors Agrawal, N. Chen, J. Hui, Z. Yeo, Y.-C. Lee, S. Chan, D.S.H. Li, M.-F. Samudra, G.S. ELECTRICAL & COMPUTER ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE Dual slope Metal gate Metal source/drain Schottky source-drain TBGD 10.1109/SISPAD.2006.282857 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 139-142 2014-10-07T04:45:57Z 2014-10-07T04:45:57Z 2007 Conference Paper Agrawal, N.,Chen, J.,Hui, Z.,Yeo, Y.-C.,Lee, S.,Chan, D.S.H.,Li, M.-F.,Samudra, G.S. (2007). Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD : 139-142. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/SISPAD.2006.282857" target="_blank">https://doi.org/10.1109/SISPAD.2006.282857</a> 1424404045 http://scholarbank.nus.edu.sg/handle/10635/83854 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic Dual slope
Metal gate
Metal source/drain
Schottky source-drain
TBGD
spellingShingle Dual slope
Metal gate
Metal source/drain
Schottky source-drain
TBGD
Agrawal, N.
Chen, J.
Hui, Z.
Yeo, Y.-C.
Lee, S.
Chan, D.S.H.
Li, M.-F.
Samudra, G.S.
Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
description 10.1109/SISPAD.2006.282857
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Agrawal, N.
Chen, J.
Hui, Z.
Yeo, Y.-C.
Lee, S.
Chan, D.S.H.
Li, M.-F.
Samudra, G.S.
format Conference or Workshop Item
author Agrawal, N.
Chen, J.
Hui, Z.
Yeo, Y.-C.
Lee, S.
Chan, D.S.H.
Li, M.-F.
Samudra, G.S.
author_sort Agrawal, N.
title Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
title_short Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
title_full Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
title_fullStr Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
title_full_unstemmed Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
title_sort interface barrier abruptness and work function requirements for scaling schottky source-drain mos transistors
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83854
_version_ 1681089512392884224

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