Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors

Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors

10.1109/SISPAD.2006.282857

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Bibliographic Details
Main Authors: Agrawal, N., Chen, J., Hui, Z., Yeo, Y.-C., Lee, S., Chan, D.S.H., Li, M.-F., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Dual slope
Metal gate
Metal source/drain
Schottky source-drain
TBGD
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83854
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Institution: National University of Singapore

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