Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors

• Main Authors: Agrawal, N., Chen, J., Hui, Z., Yeo, Y.-C., Lee, S., Chan, D.S.H., Li, M.-F., Samudra, G.S.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 主題: Dual slope; Metal gate; Metal source/drain; Schottky source-drain; TBGD
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83854
• 機構: National University of Singapore

10.1109/SISPAD.2006.282857