Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma

10.1116/1.1705590

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Bibliographic Details
Main Authors:	Chen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83862
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83862
record_format	dspace
spelling	sg-nus-scholar.10635-838622024-11-12T22:37:30Z Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma Chen, J. Yoo, W.J. Tan, Z.Y.L. Wang, Y. Chan, D.S.H. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.1705590 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 4 1552-1558 JVTAD 2014-10-07T04:46:03Z 2014-10-07T04:46:03Z 2004-07 Conference Paper Chen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H. (2004-07). Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1552-1558. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1705590 07342101 http://scholarbank.nus.edu.sg/handle/10635/83862 000223322000080 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1116/1.1705590
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chen, J. Yoo, W.J. Tan, Z.Y.L. Wang, Y. Chan, D.S.H.
format	Conference or Workshop Item
author	Chen, J. Yoo, W.J. Tan, Z.Y.L. Wang, Y. Chan, D.S.H.
spellingShingle	Chen, J. Yoo, W.J. Tan, Z.Y.L. Wang, Y. Chan, D.S.H. Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
author_sort	Chen, J.
title	Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
title_short	Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
title_full	Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
title_fullStr	Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
title_full_unstemmed	Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
title_sort	investigation of etching properties of hfo based high-k dielectrics using inductively coupled plasma
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83862
_version_	1821184306440044544

Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma

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