Investigation on oxide growth mechanism of PECVD silicon carbide films

International Journal of Modern Physics B

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Bibliographic Details
Main Authors: Choi, W.K., Leoy, C.C., Lee, L.P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83865
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Institution: National University of Singapore
Description
Summary:International Journal of Modern Physics B