Investigation on oxide growth mechanism of PECVD silicon carbide films
International Journal of Modern Physics B
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2014
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sg-nus-scholar.10635-838652015-01-07T14:30:13Z Investigation on oxide growth mechanism of PECVD silicon carbide films Choi, W.K. Leoy, C.C. Lee, L.P. ELECTRICAL & COMPUTER ENGINEERING International Journal of Modern Physics B 16 6-7 1062-1066 IJPBE 2014-10-07T04:46:05Z 2014-10-07T04:46:05Z 2002-03-20 Conference Paper Choi, W.K.,Leoy, C.C.,Lee, L.P. (2002-03-20). Investigation on oxide growth mechanism of PECVD silicon carbide films. International Journal of Modern Physics B 16 (6-7) : 1062-1066. ScholarBank@NUS Repository. 02179792 http://scholarbank.nus.edu.sg/handle/10635/83865 NOT_IN_WOS Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| country |
Singapore |
| collection |
ScholarBank@NUS |
| description |
International Journal of Modern Physics B |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Choi, W.K. Leoy, C.C. Lee, L.P. |
| format |
Conference or Workshop Item |
| author |
Choi, W.K. Leoy, C.C. Lee, L.P. |
| spellingShingle |
Choi, W.K. Leoy, C.C. Lee, L.P. Investigation on oxide growth mechanism of PECVD silicon carbide films |
| author_sort |
Choi, W.K. |
| title |
Investigation on oxide growth mechanism of PECVD silicon carbide films |
| title_short |
Investigation on oxide growth mechanism of PECVD silicon carbide films |
| title_full |
Investigation on oxide growth mechanism of PECVD silicon carbide films |
| title_fullStr |
Investigation on oxide growth mechanism of PECVD silicon carbide films |
| title_full_unstemmed |
Investigation on oxide growth mechanism of PECVD silicon carbide films |
| title_sort |
investigation on oxide growth mechanism of pecvd silicon carbide films |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83865 |
| _version_ |
1681089514389372928 |