Luminescence and vibrational properties of erbium-implanted nanoporous GaN

Luminescence and vibrational properties of erbium-implanted nanoporous GaN

10.1002/pssc.200778623

Saved in:

Bibliographic Details
Main Authors:	Soh, C.B., Chua, S.J., Sim, S.H., Tripathy, S., Alves, E.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83912
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Enhancement of erbium incorporation with implantation into nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

Threading dislocations annihilation in regrown GaN film on nanoporous GaN template
by: Soh, C.B., et al.
Published: (2014)

High quality GaN grown from a nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Enhanced luminescence efficiency due to carrier localization in InGaNGaN heterostructures grown on nanoporous GaN templates
by: Soh, C.B., et al.
Published: (2011)

Fabrication and properties of nanoporous GaN films
by: Wang, Y.D., et al.
Published: (2014)

Investigation of optical properties of nanoporous GaN films
by: Vajpeyi, A.P., et al.
Published: (2014)

Assignment of deep levels causing yellow luminescence in GaN
by: Soh, C.B., et al.
Published: (2014)

Optical activation of Eu ions in nanoporous GaN films
by: Vajpeyi, A.P., et al.
Published: (2016)

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
by: Wang, Y.D., et al.
Published: (2014)

Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
by: Soh, C.B., et al.
Published: (2016)

Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Annihilation of threading dislocations in regrown GaN on electrochemically etched nanoporous GaN template with optimization of buffer layer growth
by: Soh, C.B., et al.
Published: (2014)

High optical quality nanoporous GaN prepared by photoelectrochemical etching
by: Vajpeyi, A.P., et al.
Published: (2014)

Nanopore morphology in porous GaN template and its effect on the LEDs emission
by: Soh, C.B., et al.
Published: (2014)

Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etching
by: Vajpeyi, A.P., et al.
Published: (2014)

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

The influence of V defects on luminescence properties of AlInGaN quaternary alloys
by: Soh, C.B., et al.
Published: (2014)

Selective excitation of the yellow luminescence of GaN
by: Colton, J.S., et al.
Published: (2014)

Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates
by: Soh, C.B., et al.
Published: (2014)

Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth
by: Hartono, H., et al.
Published: (2014)

Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopy
by: Soh, C.B., et al.
Published: (2014)

Activation of beryllium-implanted GaN by two-step annealing
by: Sun, Y., et al.
Published: (2014)

Yellow luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence
by: Teo, E.J., et al.
Published: (2014)

Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
by: Soh, C.B., et al.
Published: (2014)

Identification of deep levels in GaN associated with dislocations
by: Soh, C.B., et al.
Published: (2014)

P-type doping in GaN through Be implantation
by: Feng, Z.C., et al.
Published: (2014)

Characterization of high quality continuous GaN films grown on Si-doped cracked GaN template
by: Soh, C.B., et al.
Published: (2014)

Selective excitation and thermal quenching of the yellow luminescence of GaN
by: Colton, J.S., et al.
Published: (2014)

Selective excitation and thermal quenching of the yellow luminescence of GaN
by: Colton, J.S., et al.
Published: (2014)

Electronic and vibronic properties of n-type GaN: The influence of etching and annealing
by: Tripathy, S., et al.
Published: (2014)

Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)
by: Tripathy, S., et al.
Published: (2014)

Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth
by: Hartono, H., et al.
Published: (2014)

Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence
by: Teo, E.J., et al.
Published: (2014)

Raman scattering spectra in C-implanted GaN epilayers
by: Sun, W.H., et al.
Published: (2014)

Spectral features of LO phonon sidebands in luminescence of free excitons in GaN
by: Xu, S.J., et al.
Published: (2014)

Pulsed laser annealing of Be-implanted GaN
by: Wang, H.T., et al.
Published: (2014)

Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
by: Seetoh, I.P., et al.
Published: (2014)

Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures
by: Soh, C.B., et al.
Published: (2014)

Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs
by: Soh, C.B., et al.
Published: (2014)

Activation of beryllium-implanted GaN by two-step annealing
by: Sun, Yuejun, et al.
Published: (2014)