Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel

Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel

10.1109/ISDRS.2011.6135174

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Bibliographic Details
Main Authors: Cheng, R., Ding, Y., Liu, B., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83967
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Institution: National University of Singapore
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Summary:10.1109/ISDRS.2011.6135174

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