Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel

10.1109/ISDRS.2011.6135174

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Bibliographic Details
Main Authors:	Cheng, R., Ding, Y., Liu, B., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83967
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83967
record_format	dspace
spelling	sg-nus-scholar.10635-839672015-01-07T06:29:33Z Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel Cheng, R. Ding, Y. Liu, B. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ISDRS.2011.6135174 2011 International Semiconductor Device Research Symposium, ISDRS 2011 - 2014-10-07T04:47:15Z 2014-10-07T04:47:15Z 2011 Conference Paper Cheng, R.,Ding, Y.,Liu, B.,Yeo, Y.-C. (2011). Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2011.6135174" target="_blank">https://doi.org/10.1109/ISDRS.2011.6135174</a> 9781457717550 http://scholarbank.nus.edu.sg/handle/10635/83967 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/ISDRS.2011.6135174
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Cheng, R. Ding, Y. Liu, B. Yeo, Y.-C.
format	Conference or Workshop Item
author	Cheng, R. Ding, Y. Liu, B. Yeo, Y.-C.
spellingShingle	Cheng, R. Ding, Y. Liu, B. Yeo, Y.-C. Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
author_sort	Cheng, R.
title	Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
title_short	Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
title_full	Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
title_fullStr	Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
title_full_unstemmed	Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
title_sort	modeling of a new liner stressor comprising ge 2sb 2te 5 (gst): amorphous-crystalline phase change and stress induced in finfet channel
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83967
_version_	1681089532793978880

Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel

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