Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs

Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs

10.1109/VLSI-TSA.2013.6545609

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Bibliographic Details
Main Authors: Kong, E., Gong, X., Guo, P., Liu, B., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84023
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/84023

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