Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs

10.1109/VLSI-TSA.2013.6545609

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Main Authors:	Kong, E., Gong, X., Guo, P., Liu, B., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84023
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84023
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spelling	sg-nus-scholar.10635-840232024-11-08T16:45:05Z Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs Kong, E. Gong, X. Guo, P. Liu, B. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSI-TSA.2013.6545609 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - 2014-10-07T04:47:54Z 2014-10-07T04:47:54Z 2013 Conference Paper Kong, E.,Gong, X.,Guo, P.,Liu, B.,Yeo, Y.-C. (2013). Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2013.6545609" target="_blank">https://doi.org/10.1109/VLSI-TSA.2013.6545609</a> 9781467330817 http://scholarbank.nus.edu.sg/handle/10635/84023 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/VLSI-TSA.2013.6545609
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Kong, E. Gong, X. Guo, P. Liu, B. Yeo, Y.-C.
format	Conference or Workshop Item
author	Kong, E. Gong, X. Guo, P. Liu, B. Yeo, Y.-C.
spellingShingle	Kong, E. Gong, X. Guo, P. Liu, B. Yeo, Y.-C. Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
author_sort	Kong, E.
title	Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
title_short	Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
title_full	Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
title_fullStr	Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
title_full_unstemmed	Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
title_sort	novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for ingaas n-mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84023
_version_	1821182098298372096

Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs

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