Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
10.1109/VLSI-TSA.2013.6545609
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84023 |
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| Institution: | National University of Singapore |