On the dominant interface trap generation process during hot-carrier stressing

On the dominant interface trap generation process during hot-carrier stressing

Annual Proceedings - Reliability Physics (Symposium)

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Bibliographic Details
Main Authors: Ang, D.S., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Ac stress
Charge pumping current
Hot carrier
Interface trap
Lightly doped drain
MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84038
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Institution: National University of Singapore
Description
Summary:Annual Proceedings - Reliability Physics (Symposium)

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