STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology
10.1109/ESSDER.2005.1546702
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sg-nus-scholar.10635-842262023-10-30T22:53:30Z STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology Phua, W.H.T. Ang, D.S. Ling, C.H. Chui, K.J. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDER.2005.1546702 Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005 533-536 2014-10-07T04:50:15Z 2014-10-07T04:50:15Z 2005 Conference Paper Phua, W.H.T., Ang, D.S., Ling, C.H., Chui, K.J. (2005). STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology. Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005 : 533-536. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDER.2005.1546702 0780392035 http://scholarbank.nus.edu.sg/handle/10635/84226 000236176200125 Scopus |
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National University of Singapore |
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Asia |
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Singapore Singapore |
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| description |
10.1109/ESSDER.2005.1546702 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Phua, W.H.T. Ang, D.S. Ling, C.H. Chui, K.J. |
| format |
Conference or Workshop Item |
| author |
Phua, W.H.T. Ang, D.S. Ling, C.H. Chui, K.J. |
| spellingShingle |
Phua, W.H.T. Ang, D.S. Ling, C.H. Chui, K.J. STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology |
| author_sort |
Phua, W.H.T. |
| title |
STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology |
| title_short |
STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology |
| title_full |
STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology |
| title_fullStr |
STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology |
| title_full_unstemmed |
STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology |
| title_sort |
sti-induced damage and hot-carrier reliability in the narrow width short channel nmosfet fabricated using global strained-si technology |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84226 |
| _version_ |
1781784434067898368 |