Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

10.1109/ESSDERC.2007.4430901

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Bibliographic Details
Main Authors:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84228
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84228
record_format	dspace
spelling	sg-nus-scholar.10635-842282024-11-11T18:20:09Z Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDERC.2007.4430901 ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference 151-154 2014-10-07T04:50:16Z 2014-10-07T04:50:16Z 2008 Conference Paper Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 151-154. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430901 1424411238 http://scholarbank.nus.edu.sg/handle/10635/84228 000252831900029 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/ESSDERC.2007.4430901
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
spellingShingle	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
author_sort	Liow, T.-Y.
title	Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
title_short	Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
title_full	Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
title_fullStr	Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
title_full_unstemmed	Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
title_sort	strain enhancement in spacerless n-channel finfets with silicon-carbon source and drain stressors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84228
_version_	1821217705383952384

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

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