Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

10.1109/ESSDERC.2007.4430901

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Bibliographic Details
Main Authors:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84228
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Institution:	National University of Singapore

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