Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content
10.1109/VTSA.2008.4530829
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2014
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sg-nus-scholar.10635-842302023-10-30T22:52:54Z Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2008.4530829 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 126-127 2014-10-07T04:50:17Z 2014-10-07T04:50:17Z 2008 Conference Paper Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 126-127. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530829 9781424416158 http://scholarbank.nus.edu.sg/handle/10635/84230 000256564900058 Scopus |
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| description |
10.1109/VTSA.2008.4530829 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. |
| format |
Conference or Workshop Item |
| author |
Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. |
| spellingShingle |
Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content |
| author_sort |
Liow, T.-Y. |
| title |
Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content |
| title_short |
Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content |
| title_full |
Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content |
| title_fullStr |
Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content |
| title_full_unstemmed |
Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content |
| title_sort |
strained finfets with in-situ doped si1-ycy source and drain stressors: performance boost with lateral stressor encroachment and high substitutional carbon content |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84230 |
| _version_ |
1781784434558631936 |