Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content

• Main Authors: Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84230
• Institution: National University of Singapore

10.1109/VTSA.2008.4530829