Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer

• Main Authors: Han, G., Su, S., Wang, L., Wang, W., Gong, X., Yang, Y., Ivana, Guo, P., Guo, C., Zhang, G., Pan, J., Zhang, Z., Xue, C., Cheng, B., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/84231
• 機構: National University of Singapore

10.1109/VLSIT.2012.6242479