Structure effects in the gate-all-around silicon nanowire MOSFETs

Structure effects in the gate-all-around silicon nanowire MOSFETs

10.1109/EDSSC.2007.4450079

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Bibliographic Details
Main Author: Liang, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84242
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Institution: National University of Singapore
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Summary:10.1109/EDSSC.2007.4450079

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