Structure effects in the gate-all-around silicon nanowire MOSFETs
10.1109/EDSSC.2007.4450079
Saved in:
Main Author: | Liang, G. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84242 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Compact modeling of gate-all-around silicon nanowire MOSFETs
by: Lin Shihuan
Published: (2012) -
Gate-all-around silicon nanowire FET modeling
by: Chen, Xiangchen
Published: (2014) -
Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors
by: Peng, J.W., et al.
Published: (2014) -
Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics
by: RAMANATHAN GANDHI
Published: (2012) -
A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
by: Wang, T., et al.
Published: (2014)