Study of electrically active defects in n-GaN layer

Study of electrically active defects in n-GaN layer

10.1016/S1369-8001(02)00025-2

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Bibliographic Details
Main Authors: Soh, C.B., Chi, D.Z., Ramam, A., Lim, H.F., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Capacitance transient
DLTs
GaN
Logarithmic capture kinetics
Majority carrier trap
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84247
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Institution: National University of Singapore
Description
Summary:10.1016/S1369-8001(02)00025-2

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