Study of electrically active defects in n-GaN layer

10.1016/S1369-8001(02)00025-2

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Bibliographic Details
Main Authors:	Soh, C.B., Chi, D.Z., Ramam, A., Lim, H.F., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Capacitance transient DLTs GaN Logarithmic capture kinetics Majority carrier trap
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84247
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84247
record_format	dspace
spelling	sg-nus-scholar.10635-842472023-10-26T21:58:45Z Study of electrically active defects in n-GaN layer Soh, C.B. Chi, D.Z. Ramam, A. Lim, H.F. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING Capacitance transient DLTs GaN Logarithmic capture kinetics Majority carrier trap 10.1016/S1369-8001(02)00025-2 Materials Science in Semiconductor Processing 4 6 595-600 2014-10-07T04:50:30Z 2014-10-07T04:50:30Z 2001-12 Conference Paper Soh, C.B., Chi, D.Z., Ramam, A., Lim, H.F., Chua, S.J. (2001-12). Study of electrically active defects in n-GaN layer. Materials Science in Semiconductor Processing 4 (6) : 595-600. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00025-2 13698001 http://scholarbank.nus.edu.sg/handle/10635/84247 000175066200025 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Capacitance transient DLTs GaN Logarithmic capture kinetics Majority carrier trap
spellingShingle	Capacitance transient DLTs GaN Logarithmic capture kinetics Majority carrier trap Soh, C.B. Chi, D.Z. Ramam, A. Lim, H.F. Chua, S.J. Study of electrically active defects in n-GaN layer
description	10.1016/S1369-8001(02)00025-2
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Soh, C.B. Chi, D.Z. Ramam, A. Lim, H.F. Chua, S.J.
format	Conference or Workshop Item
author	Soh, C.B. Chi, D.Z. Ramam, A. Lim, H.F. Chua, S.J.
author_sort	Soh, C.B.
title	Study of electrically active defects in n-GaN layer
title_short	Study of electrically active defects in n-GaN layer
title_full	Study of electrically active defects in n-GaN layer
title_fullStr	Study of electrically active defects in n-GaN layer
title_full_unstemmed	Study of electrically active defects in n-GaN layer
title_sort	study of electrically active defects in n-gan layer
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84247
_version_	1781784435663831040

Study of electrically active defects in n-GaN layer

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